The data points of curve A and curve B in Figures 7 are listed in Table 1 and Table 2 respectively. The e-beam exposure duration in µsec per pixel and the corresponding clock rates to result in the tabulated electron dosage is also listed in the tables.

As is shown in Fig. 7 and the corresponding table, the e-beam induced optical density in HEBS-glass is dependent on e-beam write parameters. This phenomenon can be understood from the mechanism of e-beam darkening which is described in product information number 96-18[2] (Can request this documentation by e-mail).

Fig. 8 exhibits net optical density values at 436nm vs. electron dosage at 20kv. Curve A displays the data of e-beam exposure using the raster scan e-beam pattern generator, MEBES III. MEBES III was operated at 20kv, 40 MHz rate, using a spot size of 1 µm, a beam current of 4000na and an addressing grid size of 0.5µm. These write parameters result in an exposure dosage of 40µC/cm² per scan count. Electron dosage having multiples of 40µC/cm² were exposed on HEBS-glass using the number of scan counts as a variable parameter. The data points of Curve A corresponds to 1, 6, 8, 10, 12, and 14 scan counts. Curve B displays the data of e-beam exposure using Cambridge EBMF 10.5 e-beam writer operated at 20kv, 25na and 0.1µm addressing grid spacing. Also shown in Fig. 8 for comparison is the net optical density values at 436nm resulting from EVC flood gun exposure at 20kv.